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| DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * Low current consumption * Low noise figure * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 170 C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C open base CONDITIONS open emitter MIN. - - - - 50 3.5 - - TYP. - - - - 80 5 13 1.8 1 Top view BFS25A PINNING PIN 1 2 3 DESCRIPTION Code: N6 base emitter collector handbook, 2 columns 3 2 MBC870 Fig.1 SOT323. MAX. 8 5 6.5 32 200 - - - UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 170 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 8 5 2 6.5 32 150 175 UNIT V V V mA mW C C December 1997 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Cre fT GUM F PARAMETER collector cut-off current DC current gain feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 0.5 mA; VCE = 1 V IC = 0; VCB = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2 BFS25A PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 170 C; note 1 THERMAL RESISTANCE 190 K/W MIN. - 50 - 3.5 - - - TYP. - 80 0.3 5 13 1.8 2 MAX. 50 200 0.45 - - - - UNIT nA pF GHz dB dB dB December 1997 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A MRC038 - 1 MRC037 handbook,40 halfpage handbook, halfpage 100 P tot (mW) 30 h FE 80 60 20 40 10 20 0 0 50 100 150 Ts (oC) 200 0 10-3 10-2 10-1 1 I C (mA) 10 VCE = 1 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. handbook, halfpage 0.5 MRC031 MRC032 C re (pF) handbook, halfpage 10 0.4 fT (GHz) 8 VCE = 3 V 1V 0.3 6 0.2 4 0.1 2 0 0 1 2 3 4 5 VCB (V) 0 0 0.5 1 1.5 2 2.5 I C (mA) IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. December 1997 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage BFS25A 20 MRC036 G UM handbook, halfpage 25 gain (dB) 20 MRC035 (dB) 16 VCE = 3 V 1V G UM 12 15 MSG 10 8 4 5 0 0 0.5 1 1.5 2 2.5 I C (mA) 0 0 0.5 1 1.5 2 2.5 I C (mA) f = 1 GHz; Tamb = 25 C. VCE = 1 V; f = 500 MHz; Tamb = 25 C. Fig.6 Gain as a function of collector current. Fig.7 Maximum unilateral power gain as a function of collector current. handbook, halfpage 50 MRC034 handbook, halfpage gain (dB) 40 G UM 30 50 gain (dB) 40 MRC033 G UM 30 20 MSG 20 MSG 10 G max 0 0.01 0.1 1 f (GHz) 10 10 G max 0 10-2 10-1 1 10 f (GHz) IC = 0.5 mA; VCE = 1 V; Tamb = 25 C. IC = 1 mA; VCE = 1 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. December 1997 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A handbook, halfpage 4 MCD145 handbook, halfpage 4 MCD146 F (dB) 3 f = 2 GHz 1 GHz 500 MHz 2 F (dB) 3 IC = 2 mA 1 mA 2 0.5 mA 1 1 0 10-1 1 IC (mA) 10 0 102 103 f (MHz) 104 VCE = 1 V; Tamb = 25 C. VCE = 1 V; Tamb = 25 C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. handbook, full pagewidth pot. unst. region 90 1.0 1 45 0.8 0.6 0.4 0.2 0 0 135 0.5 2 stability circle 0.2 MSG = 13.9 dB 0.2 12 dB 0.5 1 2 OPT 5 F = 2.5 dB F = 4 dB 0.2 10 dB F = 6 dB 5 180 0 5 Fmin = 1.9 dB -135 0.5 1 2 -45 MRC075 1.0 -90 IC = 1 mA; VCE = 1 V; f = 500 MHz; Zo = 50 . Fig.12 Noise circle. December 1997 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 stability circle MSG = 11.1 dB 0.2 5 OPT 180 0 0.2 0.5 10 dB 1 2 5 F = 3 dB F = 4 dB 0.2 8 dB F = 6 dB 5 0 0.4 0.2 0 Fmin = 2 dB -135 0.5 1 2 -45 MRA076 1.0 -90 IC = 1 mA; VCE = 1 V; f = 1 GHz; Zo = 50 . Fig.13 Noise circle. handbook, full pagewidth Gmax = 7. 5 dB 90 1.0 1 135 0.5 7 dB 2 45 0.8 0.6 0.2 Fmin = 2.4 dB OPT 5 0.4 0.2 0 0 180 0 0.2 0.5 5 dB 1 F = 2.5 dB 2 5 F = 4 dB 3 dB 0.2 F = 6 dB 5 -135 0.5 1 2 -45 MRC051 1.0 -90 IC = 1 mA; VCE = 1 V; f = 2 GHz; Zo = 50 . Fig.14 Noise circle. December 1997 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 3 GHz 0.2 5 0 0 0.2 5 -135 0.5 1 2 -45 MRA052 1.0 -90 IC = 1 mA; VCE = 1 V; Zo = 50 . Fig.15 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 3 GHz 180 5 4 40 MHz 3 2 1 0 -135 -45 -90 IC = 1 mA; VCE = 1 V. MRC053 Fig.16 Common emitter forward transmission coefficient (S21). December 1997 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A handbook, full pagewidth 90 135 3 GHz 45 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 IC = 1 mA; VCE = 1 V. MRC054 Fig.17 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0 0 0.2 5 0.2 3 GHz 0.5 1 2 5 -135 -45 MRC055 1.0 -90 IC = 1 mA; VCE = 1 V; Zo = 50 . Fig.18 Common emitter output reflection coefficient (S22). December 1997 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS25A SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 December 1997 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFS25A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 11 |
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